Fabrication method for semiconductor integrated circuit device

To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15 G having an SiGe layer 15 b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF 3 gas. Thereby, the gate electrode 15 G can be formed without causing sid...

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Bibliographic Details
Main Authors Yamazaki, Kazuo, Kuniyoshi, Shinji, Kusakari, Kousuke, Ikeda, Takenobu, Tadokoro, Masahiro
Format Patent
LanguageEnglish
Published 19.02.2004
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Summary:To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15 G having an SiGe layer 15 b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF 3 gas. Thereby, the gate electrode 15 G can be formed without causing side etching at two side faces (SiGe layer 15 b ) of the gate electrode 15 G.