Pattern forming method, method of making microdevice, method of making thin-film magnetic head, method of making magnetic head slider, method of making magnetic head apparatus, and method of making magnetic recording and reproducing apparatus
A metal film made of a metal material (e.g., NiFe, CoFeNi, or FeCo) including an iron atom is formed on a substrate (S 101 ). Subsequently, the metal film formed on the substrate is plasma-processed in an environment including a gas (e.g., an oxygen gas having a tetrafluoromethane or trifluoromethan...
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
27.11.2003
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| Online Access | Get full text |
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| Summary: | A metal film made of a metal material (e.g., NiFe, CoFeNi, or FeCo) including an iron atom is formed on a substrate (S
101
). Subsequently, the metal film formed on the substrate is plasma-processed in an environment including a gas (e.g., an oxygen gas having a tetrafluoromethane or trifluoromethane gas added thereto) containing oxygen and fluorine atoms (S
103
). Then, a resist material (e.g., a chemically amplified positive resist material) is applied onto the plasma-processed metal film, so as to form a resist film (S
105
). Thereafter, the resist film is partly removed, so as to expose a part of the surface of metal film in conformity to a desirable pattern, thereby forming a resist frame (S
107
). |
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