Connection terminals and manufacturing method of the same, semiconductor device and manufacturing method of the same
A first protection film ( 3 ) and a second protection film ( 4 ) are formed on an electrode pad ( 2 ). Bumps ( 5 ) are formed at sites where the deposited first and second protection films ( 3 ), ( 4 ) are both removed. The openings ( 3 a ) where the lower, first protection film ( 3 ) is removed are...
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| Main Authors | , , |
|---|---|
| Format | Patent |
| Language | English |
| Published |
30.10.2003
|
| Online Access | Get full text |
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| Summary: | A first protection film (
3
) and a second protection film (
4
) are formed on an electrode pad (
2
). Bumps (
5
) are formed at sites where the deposited first and second protection films (
3
), (
4
) are both removed. The openings (
3
a
) where the lower, first protection film (
3
) is removed are larger than the openings (
4
a
) where the upper, second protection film (
4
) is removed, so that the upper, second protection film (
4
) has an overhanging structure. The bottom periphery of the bump (
5
) is formed to extend under the second protection film (
4
). |
|---|