Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications

A method of gate metal layer deposition using a cyclical deposition process for thin film transistor applications is described. The cyclical deposition process comprises alternately adsorbing a metal-containing precursor and a reducing gas on a substrate. Thin film transistors, such as a bottom-gate...

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Bibliographic Details
Main Authors Shang, Quan Yuan, Law, Kam, Harshbarger, William Reid, Maydan, Dan
Format Patent
LanguageEnglish
Published 16.10.2003
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Summary:A method of gate metal layer deposition using a cyclical deposition process for thin film transistor applications is described. The cyclical deposition process comprises alternately adsorbing a metal-containing precursor and a reducing gas on a substrate. Thin film transistors, such as a bottom-gate transistor or a top-gate transistor, including a gate layer, may be formed using such cyclical deposition techniques.