Method and system of forming semiconductor wiring, method and system of fabrication semiconductor device, and wafer

A vacuum chamber the inside of which can be maintained in a substantially vacuum condition is used; a wafer in which a semiconductor wiring film is to be formed is held by a wafer substrate holder disposed in the vacuum chamber; the material of the semiconductor wiring film is evaporated by an evapo...

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Bibliographic Details
Main Authors Doi, Toshiya, Marunaka, Masao, Nose, Kouichi, Takigawa, Shirou, Otake, Kiyoshi
Format Patent
LanguageEnglish
Published 14.08.2003
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Summary:A vacuum chamber the inside of which can be maintained in a substantially vacuum condition is used; a wafer in which a semiconductor wiring film is to be formed is held by a wafer substrate holder disposed in the vacuum chamber; the material of the semiconductor wiring film is evaporated by an evaporation source disposed in the vacuum chamber; and a high frequency electric power for generating a plasma in the vacuum chamber, making use of the substrate holder as an electrode is supplied from a high frequency power source.