Method for forming inside nitride spacer for deep trench device DRAM cell

A method is provided for forming an inside nitride spacer in a deep trench device DRAM cell. The method includes etching a stud from a semiconductor material including a first spacer positioned on the sidewalls of the deep trench, wherein two of the sidewalls are formed of isolation trench oxide. Th...

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Bibliographic Details
Main Author Scholz, Arnd
Format Patent
LanguageEnglish
Published 03.04.2003
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Summary:A method is provided for forming an inside nitride spacer in a deep trench device DRAM cell. The method includes etching a stud from a semiconductor material including a first spacer positioned on the sidewalls of the deep trench, wherein two of the sidewalls are formed of isolation trench oxide. The method further includes depositing an oxide layer on the surface of the semiconductor, and depositing a second spacer in the deep trench of the semiconductor, wherein the second spacer has a positive taper relative to the isolation trench oxide.