Method of manufacturing capacitor
An isolation oxide film ( 2 ) has a recess. The bottom of the recess is below the upper surfaces of a P well ( 21 ) and an N well ( 22 ). A capacitor is provided on the bottom of the recess.
Saved in:
| Main Author | |
|---|---|
| Format | Patent |
| Language | English |
| Published |
27.03.2003
|
| Online Access | Get full text |
Cover
Loading…
| Summary: | An isolation oxide film (
2
) has a recess. The bottom of the recess is below the upper surfaces of a P well (
21
) and an N well (
22
). A capacitor is provided on the bottom of the recess. |
|---|