Process for removing polymers during the fabrication of semiconductor devices
The present invention relates to a process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with an aqueous ammonia or ammonium hydroxide solution, optionally containing ozone for a time sufficient to effectively...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
06.02.2003
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Online Access | Get full text |
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