Process for removing polymers during the fabrication of semiconductor devices
The present invention relates to a process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with an aqueous ammonia or ammonium hydroxide solution, optionally containing ozone for a time sufficient to effectively...
Saved in:
| Main Authors | , , |
|---|---|
| Format | Patent |
| Language | English |
| Published |
06.02.2003
|
| Online Access | Get full text |
Cover
Loading…
| Summary: | The present invention relates to a process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with an aqueous ammonia or ammonium hydroxide solution, optionally containing ozone for a time sufficient to effectively remove said post-etch residues or polymers from the surface of the semiconductor device and rinsing the semiconductor device with ozonized water, i.e. water enriched with ozone, in which water is preferably deionized (ozone-DIW). |
|---|