Dual hardmask single damascene integration scheme in an organic low k ILD
A process of using a dual hardmask single damascene process integration scheme in an organic low k interlayer dielectric (ILD) to make a semiconductor comprising: a) providing a semiconductor substrate; b) depositing an organic low k ILD layer on the substrate; c) forming a hardmask 1 on the organic...
Saved in:
| Main Authors | , , |
|---|---|
| Format | Patent |
| Language | English |
| Published |
07.11.2002
|
| Online Access | Get full text |
Cover
Loading…
| Summary: | A process of using a dual hardmask single damascene process integration scheme in an organic low k interlayer dielectric (ILD) to make a semiconductor comprising:
a) providing a semiconductor substrate;
b) depositing an organic low k ILD layer on the substrate;
c) forming a hardmask
1
on the organic low k ILD layer and forming a sacrificial hardmask
2
on hardmask
1;
d) forming a patterned photoresist layer on sacrificial hardmask
2;
e) performing an etch selective to sacrificial hardmask
2
and stripping the photoresist;
f) performing an etch of hardmask
1
in which the etch is selective to the organic low k ILD layer;
g) depositing a liner or conformal barrier layer over the substrate, organic low k ILD layer, hardmask
1
and hardmask
2;
h) forming a plated metal layer over the liner or conformal barrier layer; and
i) removing the metal layer and removing said liner with simultaneous removal of sacrificial hardmask
2
in a manner such that facets in sacrificial hardmask
2
are removed during liner/sacrificial hardmask
2
removal. |
|---|