Silicon single crystal, silicon wafer, and epitaxial wafer

• Main Authors: Asayama, Eiichi, Horai, Masataka, Murakami, Hiroki, Kubo, Takayuki, Umeno, Shigeru, Sadamitsu, Shinsuke, Koike, Yasuo, Sueoka, Kouji, Katahama, Hisashi
• Format: Patent
• Language: English
• Published: 03.10.2002

There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×10 13 atoms/cm 3...