Silicon single crystal, silicon wafer, and epitaxial wafer

• Main Authors: Asayama, Eiichi, Horai, Masataka, Murakami, Hiroki, Kubo, Takayuki, Umeno, Shigeru, Sadamitsu, Shinsuke, Koike, Yasuo, Sueoka, Kouji, Katahama, Hisashi
• Format: Patent
• Language: English
• Published: 03.10.2002

There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×10 13 atoms/cm 3 or more, or with nitrogen doping at a concentration of 1×10 12 atoms/cm 3 and carbon doping at a concentration of 0.1×10 16 −5×10 16 atoms/cm 3 and/or boron doping at a concentration of 1×10 17 atoms/cm 3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment, which is a factor for increasing the number of production steps and production costs.