Silicon single crystal, silicon wafer, and epitaxial wafer
There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×10 13 atoms/cm 3...
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | English |
Published |
03.10.2002
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Online Access | Get full text |
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Abstract | There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×10
13
atoms/cm
3
or more, or with nitrogen doping at a concentration of 1×10
12
atoms/cm
3
and carbon doping at a concentration of 0.1×10
16
−5×10
16
atoms/cm
3
and/or boron doping at a concentration of 1×10
17
atoms/cm
3
or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment, which is a factor for increasing the number of production steps and production costs. |
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AbstractList | There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×10
13
atoms/cm
3
or more, or with nitrogen doping at a concentration of 1×10
12
atoms/cm
3
and carbon doping at a concentration of 0.1×10
16
−5×10
16
atoms/cm
3
and/or boron doping at a concentration of 1×10
17
atoms/cm
3
or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment, which is a factor for increasing the number of production steps and production costs. |
Author | Kubo, Takayuki Koike, Yasuo Katahama, Hisashi Sueoka, Kouji Horai, Masataka Sadamitsu, Shinsuke Murakami, Hiroki Umeno, Shigeru Asayama, Eiichi |
Author_xml | – sequence: 1 givenname: Eiichi surname: Asayama fullname: Asayama, Eiichi – sequence: 1 givenname: Masataka surname: Horai fullname: Horai, Masataka – sequence: 2 givenname: Hiroki surname: Murakami fullname: Murakami, Hiroki – sequence: 3 givenname: Takayuki surname: Kubo fullname: Kubo, Takayuki – sequence: 4 givenname: Shigeru surname: Umeno fullname: Umeno, Shigeru – sequence: 5 givenname: Shinsuke surname: Sadamitsu fullname: Sadamitsu, Shinsuke – sequence: 6 givenname: Yasuo surname: Koike fullname: Koike, Yasuo – sequence: 7 givenname: Kouji surname: Sueoka fullname: Sueoka, Kouji – sequence: 8 givenname: Hisashi surname: Katahama fullname: Katahama, Hisashi |
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Snippet | There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated... |
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Title | Silicon single crystal, silicon wafer, and epitaxial wafer |
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