Method of forming a spin-on-glass insulation layer

A method of forming a SOG insulation layer of a semiconductor device comprises the steps of forming the SOG insulation layer on a substrate having a stepped pattern using a solution containing a polysilazane in an amount of less than 20% by weight in terms concentration of solid content, performing...

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Bibliographic Details
Main Authors Goo, Ju-Seon, Hong, Eun-Kee, Kim, Hong-Gun, Hong, Jin-Gi
Format Patent
LanguageEnglish
Published 29.08.2002
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Summary:A method of forming a SOG insulation layer of a semiconductor device comprises the steps of forming the SOG insulation layer on a substrate having a stepped pattern using a solution containing a polysilazane in an amount of less than 20% by weight in terms concentration of solid content, performing a pre-bake process for removing solvent ingredients in the insulation layer at a temperature of 50 to 350° C., and annealing at a temperature of 600 to 1200° C. The method of the invention further includes performing a hard bake process at a temperature of about 400° C. between the pre-bake process and the annealing step. Also, the polysilazane is desirably contained in an amount of 10 to 15% by weight.