Process for the surface polishing of silicon wafers

A process for the surface polishing of a silicon wafer, includes the successive polishing of the silicon wafer on at least two different polishing plates covered with polishing cloth, with a continuous supply of alkaline polishing abrasive with SiO 2 constituents, an amount of silicon removed during...

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Bibliographic Details
Main Authors Buschhardt, Thomas, Wenski, Guido, Hennhofer, Heinrich, Lichtenegger, Bruno
Format Patent
LanguageEnglish
Published 20.06.2002
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Summary:A process for the surface polishing of a silicon wafer, includes the successive polishing of the silicon wafer on at least two different polishing plates covered with polishing cloth, with a continuous supply of alkaline polishing abrasive with SiO 2 constituents, an amount of silicon removed during the polishing on a first polishing plate being significantly higher than on a second polishing plate, with the overall amount of silicon removed not exceeding 1.5 m. A polishing abrasive ( 1 a ), then a mixture of a polishing abrasive ( 1 b ) and at least one alcohol, and finally ultrapure water ( 1 c ) are added to the first polishing plate, and a mixture of a polishing abrasive ( 2 a ) and at least one alcohol and then ultrapure water ( 2 b ) are added to the second plate.