Method for forming Ta2O5 dielectric layer

A method for forming a Ta 2 O 5 dielectric layer by using an atomic layer deposition (ALD) method and an in-situ plasma treatment. The method includes steps of: a) depositing a Ta 2 O 5 dielectric layer on a substrate; b) performing a plasma treatment using N 2 O gas; c) repeating the steps of a) an...

Full description

Saved in:
Bibliographic Details
Main Authors Kim, Kyong-Min, Song, Han-Sang
Format Patent
LanguageEnglish
Published 20.06.2002
Online AccessGet full text

Cover

More Information
Summary:A method for forming a Ta 2 O 5 dielectric layer by using an atomic layer deposition (ALD) method and an in-situ plasma treatment. The method includes steps of: a) depositing a Ta 2 O 5 dielectric layer on a substrate; b) performing a plasma treatment using N 2 O gas; c) repeating the steps of a) and b) at least one time; and d) annealing the Ta 2 O 5 dielectric layer for the crystallization of the Ta 2 O 5 dielectric layer.