Method of manufacturing semiconductor integrated circuit device

• Main Authors: Abe, Hisahiko, Nakabayashi, Shinichi, Tsuchiyama, Hirofumi, Kenbo, Yukio, Katsumura, Yoshiteru
• Format: Patent
• Language: English
• Published: 11.04.2002

In the manufacturing method, micro scratches are detected without performing a breakdown inspection on wafers flowing through a mass production process. The method comprises: a step of forming an insulating film on main surfaces of a plurality of first wafers which flow through a mass-production process; a step of preparing a dummy wafer for monitoring, on which a silicon-oxide-based insulating film is formed; a step of performing chemical mechanical polishing processing on the insulating films respectively formed on main surfaces of the plurality of first wafers and the dummy wafer; a step of performing etching processing on the insulating film of the dummy wafer with use of a solution containing hydrofluoric acid, after the step of performing the chemical mechanical polishing processing; and a step of measuring a number of scratches on the insulating film of the dummy wafer subjected to the etching processing, thereby to manage the number of scratches formed in the insulating films of the plurality of first wafers in the step of performing the chemical mechanical polishing processing.