Defect and etch rate control in trench etch for dual damascene patterning of low-k dielectrics

A dual damascene process for low-k or ultra low-k dielectric such as organo-silicate glass (OSG). After the via ( 112 ) etch, a trench ( 121 ) is etched in the OSG layer ( 108 ) using a less-polymerizing fluorocarbon added to an etch chemistry comprising a fluorocarbon and low N 2 /Ar ratio. The low...

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Bibliographic Details
Main Authors Jiang, Ping, Celii, Francis, Newton, Kenneth, Sakima, Hiromi
Format Patent
LanguageEnglish
Published 14.03.2002
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Summary:A dual damascene process for low-k or ultra low-k dielectric such as organo-silicate glass (OSG). After the via ( 112 ) etch, a trench ( 121 ) is etched in the OSG layer ( 108 ) using a less-polymerizing fluorocarbon added to an etch chemistry comprising a fluorocarbon and low N 2 /Ar ratio. The low N 2 /Ar ratio controls ridge formation during the trench etch. The combination of a less-polymerizing fluorocarbon with a higher-polymerizing fluorocarbon achieves a high etch rate and defect-free conditions.