Semiconductor device
In the conventional column-side block redundancy for DRAM, competition for the replacing regions occurs unless a repair address of a large number of bits is stored in order to replace with a small replacement unit. According to one aspect of the invention, replacement decision is performed in order...
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
28.02.2002
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| Online Access | Get full text |
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| Summary: | In the conventional column-side block redundancy for DRAM, competition for the replacing regions occurs unless a repair address of a large number of bits is stored in order to replace with a small replacement unit. According to one aspect of the invention, replacement decision is performed in order that a second replacement region can be made smaller than a first replacement and that the second replacement is given priority over the first replacement. Therefore, the first replacement can be controlled by a repair address of a small number of bits, thus making it possible to achieve a semiconductor device having a defect repair circuit with small area and high repair efficiency. |
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