Influence of the sintering process on the PTCR effect of chip-type Ba1.022–xSmxTiO3 ceramics prepared by the reduction sintering-reoxidation method
We investigated the effects of sintering temperature and reoxidation annealing on the positive temperature coefficient of resistance (PTCR) effect of Ba 1.022– x Sm x TiO 3 ceramics that were sintered at 1,180–1,260 °C for 30 min in a reducing atmosphere and reoxidized at 800 °C for 1 h. Results ind...
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Published in | Journal of materials science. Materials in electronics Vol. 25; no. 2; pp. 1105 - 1111 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Boston
Springer US
2014
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Subjects | |
Online Access | Get full text |
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Summary: | We investigated the effects of sintering temperature and reoxidation annealing on the positive temperature coefficient of resistance (PTCR) effect of Ba
1.022–
x
Sm
x
TiO
3
ceramics that were sintered at 1,180–1,260 °C for 30 min in a reducing atmosphere and reoxidized at 800 °C for 1 h. Results indicated that the room-temperature (RT) resistivity and resistance jump of the ceramics decreased with increasing sintering temperature; moreover, the samples exhibited a remarkable PTCR effect with a resistance jump of 3.3 orders of magnitude and achieved a low RT resistivity of 374.4 Ω cm at a lower sintering temperature. Furthermore, the higher grain-boundary resistivity of the ceramics obtained at a high reoxidation temperature after sintering at low temperature was estimated using an impedance analyzer. In addition, the voltage versus current behavior was investigated in present study. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-013-1695-z |