In GaN-GaN quantum wells: their luminescent and nano-structural properties

The luminescent and nano-structural properties of InGaN-GaN quantum wells have been investigated as a function of indium content. Photoluminescence spectra of single quantum wells show an excitonic emission mechanism that is localised on a length scale of 12–30Å. Using high-resolution STEM high-angl...

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Bibliographic Details
Published inMicroscopy of Semiconducting Materials pp. 25 - 28
Main Authors Barnard, J S, Graham, D M, Smeeton, T M, Kappers, M J, Dawson, P, Godfrey, M, Humphreys, C J
Format Book Chapter
LanguageEnglish
Published Berlin, Heidelberg Springer Berlin Heidelberg 2005
SeriesSpringer Proceedings in Physics
Subjects
Atomic Column
Convergent Beam Electron Diffraction Pattern
Indium Content
Single Quantum
Width Fluctuation
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Summary:The luminescent and nano-structural properties of InGaN-GaN quantum wells have been investigated as a function of indium content. Photoluminescence spectra of single quantum wells show an excitonic emission mechanism that is localised on a length scale of 12–30Å. Using high-resolution STEM high-angle annular dark field imaging we have looked for nano-structural features in high-indium content multiple and single quantum wells. We find the existence of apparent well width fluctuations in the MQW sample with suggestions of indium fluctuations as well. In the single quantum well, we find a reasonably homogeneous well with no obvious signs of clustering or well width fluctuations.
ISBN:354031914X
9783540319146
ISSN:0930-8989
DOI:10.1007/3-540-31915-8_5