1 ∕ f noise of Sn O 2 nanowire transistors

• Published in: Applied physics letters Vol. 92; no. 24; pp. 243120 - 243120-3
• Main Authors: Ju, Sanghyun, Chen, Pochiang, Zhou, Chongwu, Ha, Young-geun, Facchetti, Antonio, Marks, Tobin J., Kim, Sun Kook, Mohammadi, Saeed, Janes, David B.
• Format: Journal Article
• Published: American Institute of Physics 19.06.2008

The low frequency ( 1 ∕ f ) noise in single Sn O 2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum ( S I ) is found to be proportional to I d 2 in the transistor operating regime. The extracted Hooge's const...