1 ∕ f noise of Sn O 2 nanowire transistors

The low frequency ( 1 ∕ f ) noise in single Sn O 2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum ( S I ) is found to be proportional to I d 2 in the transistor operating regime. The extracted Hooge's const...

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Published inApplied physics letters Vol. 92; no. 24; pp. 243120 - 243120-3
Main Authors Ju, Sanghyun, Chen, Pochiang, Zhou, Chongwu, Ha, Young-geun, Facchetti, Antonio, Marks, Tobin J., Kim, Sun Kook, Mohammadi, Saeed, Janes, David B.
Format Journal Article
Published American Institute of Physics 19.06.2008
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Summary:The low frequency ( 1 ∕ f ) noise in single Sn O 2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum ( S I ) is found to be proportional to I d 2 in the transistor operating regime. The extracted Hooge's constants ( α H ) are 4.5 × 1 0 − 2 at V ds = 0.1 V and 5.1 × 1 0 − 2 at V ds = 1 V , which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2947586