1 ∕ f noise of Sn O 2 nanowire transistors
The low frequency ( 1 ∕ f ) noise in single Sn O 2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum ( S I ) is found to be proportional to I d 2 in the transistor operating regime. The extracted Hooge's const...
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| Published in | Applied physics letters Vol. 92; no. 24; pp. 243120 - 243120-3 |
|---|---|
| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Published |
American Institute of Physics
19.06.2008
|
| Online Access | Get full text |
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| Abstract | The low frequency
(
1
∕
f
)
noise in single
Sn
O
2
nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum
(
S
I
)
is found to be proportional to
I
d
2
in the transistor operating regime. The extracted Hooge's constants
(
α
H
)
are
4.5
×
1
0
−
2
at
V
ds
=
0.1
V
and
5.1
×
1
0
−
2
at
V
ds
=
1
V
, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed. |
|---|---|
| AbstractList | The low frequency
(
1
∕
f
)
noise in single
Sn
O
2
nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum
(
S
I
)
is found to be proportional to
I
d
2
in the transistor operating regime. The extracted Hooge's constants
(
α
H
)
are
4.5
×
1
0
−
2
at
V
ds
=
0.1
V
and
5.1
×
1
0
−
2
at
V
ds
=
1
V
, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed. |
| Author | Janes, David B. Marks, Tobin J. Kim, Sun Kook Ha, Young-geun Mohammadi, Saeed Ju, Sanghyun Chen, Pochiang Zhou, Chongwu Facchetti, Antonio |
| Author_xml | – sequence: 1 givenname: Sanghyun surname: Ju fullname: Ju, Sanghyun organization: Department of Physics, Kyonggi University, Suwon, Kyonggi-Do 442-760, Republic of Korea – sequence: 2 givenname: Pochiang surname: Chen fullname: Chen, Pochiang organization: Department of Physics, Kyonggi University, Suwon, Kyonggi-Do 442-760, Republic of Korea – sequence: 3 givenname: Chongwu surname: Zhou fullname: Zhou, Chongwu organization: Department of Physics, Kyonggi University, Suwon, Kyonggi-Do 442-760, Republic of Korea – sequence: 4 givenname: Young-geun surname: Ha fullname: Ha, Young-geun organization: Department of Physics, Kyonggi University, Suwon, Kyonggi-Do 442-760, Republic of Korea – sequence: 5 givenname: Antonio surname: Facchetti fullname: Facchetti, Antonio organization: Department of Physics, Kyonggi University, Suwon, Kyonggi-Do 442-760, Republic of Korea – sequence: 6 givenname: Tobin surname: Marks middlename: J. fullname: Marks, Tobin J. organization: Department of Physics, Kyonggi University, Suwon, Kyonggi-Do 442-760, Republic of Korea – sequence: 7 givenname: Sun surname: Kim middlename: Kook fullname: Kim, Sun Kook organization: Department of Physics, Kyonggi University, Suwon, Kyonggi-Do 442-760, Republic of Korea – sequence: 8 givenname: Saeed surname: Mohammadi fullname: Mohammadi, Saeed organization: Department of Physics, Kyonggi University, Suwon, Kyonggi-Do 442-760, Republic of Korea – sequence: 9 givenname: David surname: Janes middlename: B. fullname: Janes, David B. email: janes@ecn.purdue.edu. organization: Department of Physics, Kyonggi University, Suwon, Kyonggi-Do 442-760, Republic of Korea |
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| Cites_doi | 10.1021/nl034853b 10.1088/0022-3727/37/20/006 10.1002/adma.200304889 10.1063/1.2001144 10.1021/jp045509l 10.1021/nl0712217 10.1088/0957-4484/17/5/018 10.1002/adma.200305439 10.1088/0957-4484/17/22/009 10.1021/nl051658j 10.1063/1.2830005 10.1038/nnano.2007.151 10.1063/1.2496007 10.1088/0957-4484/18/15/155201 10.1073/pnas.0501027102 10.1063/1.2206685 |
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| Copyright | 2008 American Institute of Physics |
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| References | Cha, H.; Wu, H.; Chandrashekhar, M.; Choi, Y.; Chae, S.; Koley, G.; Spencer, M. 2006; 17 Dattoli, E.; Wan, Q.; Guo, W.; Chen, Y.; Pan, X.; Lu, W. 2007; 7 Ju, S.; Kim, S.; Mohammadi, S.; Janes, D.; Ha, Y.-G.; Facchetti, A.; Marks, T. 2008; 92 Hernandez-Ramirez, F.; Tarancon, A.; Casals, O.; Rodriguez, J.; Romano-Rodriguez, A.; Morante, J.; Barth, S.; Mathur, S.; Choi, T.; Poulikakos, D.; Callegari, V.; Nellen, P. 2006; 17 Yoon, M.-H.; Facchetti, A.; Marks, T. 2005; 102 Liu, Z.; Zhang, D.; Han, S.; Li, C.; Tang, T.; Jin, W.; Liu, X.; Lei, B.; Zhou, C. 2003; 15 Zhang, Y.; Kolmakov, A.; Lilach, Y.; Moskovits, M. 2005; 109 Wang, W.; Xiong, H.; Edelstein, M.; Gundlach, D.; Suehle, H.; Richter, C. 2007; 101 Kalinin, S.; Shin, J.; Jesse, S.; Geohegan, D.; Baddorf, A.; Lilach, Y.; Moskovits, M.; Kolmakov, A. 2005; 98 Kolmakov, A.; Zhang, Y.; Cheng, G.; Moskovits, M. 2003; 15 Ju, S.; Facchetti, A.; Xuan, Y.; Liu, J.; Ishikawa, F.; Ye, P.; Zhou, C.; Marks, T.; Janes, D. 2007; 2 Ju, S.; Lee, K.; Janes, D.; Yoon, M.-H.; Facchetti, A.; Marks, T. 2005; 5 Hahm, J.; Lieber, C. 2004; 4 Ishigami, M.; Chen, J.; Williams, E.; Tobias, D.; Chen, Y.; Fuhrer, M. 2006; 88 Ju, S.; Lee, K.; Janes, D.; Yoon, M.-H.; Facchetti, A.; Marks, T. 2007; 18 Presley, R.; Munsee, C.; Park, C.; Wager, J.; Keszler, D. 2004; 37 |
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| Snippet | The low frequency
(
1
∕
f
)
noise in single
Sn
O
2
nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of... |
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| StartPage | 243120 |
| Title | 1 ∕ f noise of Sn O 2 nanowire transistors |
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