Ju, S., Chen, P., Zhou, C., Ha, Y., Facchetti, A., Marks, T. J., . . . Janes, D. B. (2008). 1 ∕ f noise of Sn O 2 nanowire transistors. Applied physics letters, 92(24), 243120-243120-3. https://doi.org/10.1063/1.2947586
Chicago Style (17th ed.) CitationJu, Sanghyun, Pochiang Chen, Chongwu Zhou, Young-geun Ha, Antonio Facchetti, Tobin J. Marks, Sun Kook Kim, Saeed Mohammadi, and David B. Janes. "1 ∕ F Noise of Sn O 2 Nanowire Transistors." Applied Physics Letters 92, no. 24 (2008): 243120-243120-3. https://doi.org/10.1063/1.2947586.
MLA (9th ed.) CitationJu, Sanghyun, et al. "1 ∕ F Noise of Sn O 2 Nanowire Transistors." Applied Physics Letters, vol. 92, no. 24, 2008, pp. 243120-243120-3, https://doi.org/10.1063/1.2947586.
Warning: These citations may not always be 100% accurate.