High performance In 2 O 3 nanowire transistors using organic gate nanodielectrics
We report the fabrication of high performance nanowire transistors (NWTs) using In 2 O 3 nanowires as the active channel and a self-assembled nanodielectric (SAND) as the gate insulator. The SAND-based single In 2 O 3 NWTs are controlled by individually addressed gate electrodes. These devices exhib...
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| Published in | Applied physics letters Vol. 92; no. 22; pp. 222105 - 222105-3 |
|---|---|
| Main Authors | , , , , , , , , , |
| Format | Journal Article |
| Published |
American Institute of Physics
02.06.2008
|
| Online Access | Get full text |
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| Summary: | We report the fabrication of high performance nanowire transistors (NWTs) using
In
2
O
3
nanowires as the active channel and a self-assembled nanodielectric (SAND) as the gate insulator. The SAND-based single
In
2
O
3
NWTs are controlled by individually addressed gate electrodes. These devices exhibit
n
-type transistor characteristics with an on-current of
∼
25
μ
A
for a single
In
2
O
3
nanowire at
2.0
V
ds
,
2.1
V
gs
, a subthreshold slope of
0.2
V
/decade, an on-off current ratio of
10
6
, and a field-effect mobility of
∼
1450
cm
2
∕
V
s
. These results demonstrate that SAND-based
In
2
O
3
NWTs are promising candidates for high performance nanoscale logic technologies. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2937111 |