Quantitative study of hydrogen-implantation-induced cavities in siliconby grazing incidence small angle x-ray scattering
We used grazing-incidence small angle x-ray scattering to investigate properties of hydrogen implantation-induced platelets and cavities formed in silicon as a function of the implantation and annealing parameters. Density, orientation, and size (thickness and diameter) of these buried objects can b...
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| Published in | Journal of applied physics Vol. 102; no. 2; pp. 026106 - 026106-3 |
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| Main Authors | , , , |
| Format | Journal Article |
| Published |
American Institute of Physics
27.07.2007
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| Online Access | Get full text |
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| Summary: | We used grazing-incidence small angle x-ray scattering to investigate properties of hydrogen implantation-induced platelets and cavities formed in silicon as a function of the implantation and annealing parameters. Density, orientation, and size (thickness and diameter) of these buried objects can be extracted from quantitative x-ray scattering intensity measurements, in a nondestructive manner. Detailed balance of hydrogen-induced defect evolution can be made with such data. Different defect populations result from different implantation temperatures and a low limit H dose is found for
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platelets formation. |
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| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.2761821 |