Sol-gel prepared β - Ga 2 O 3 thin films for ultraviolet photodetectors

β - Ga 2 O 3 thin films have been prepared on (0001) sapphire substrates by the sol-gel method. X-ray diffraction showed that β - Ga 2 O 3 polycrystalline films were formed at heat-treatment temperatures above 600 ° C . With increasing heat-treatment temperature above 900 ° C , the lattice constants...

Full description

Saved in:
Bibliographic Details
Published inApplied physics letters Vol. 90; no. 3; pp. 031912 - 031912-3
Main Authors Kokubun, Yoshihiro, Miura, Kasumi, Endo, Fumie, Nakagomi, Shinji
Format Journal Article
Published American Institute of Physics 19.01.2007
Online AccessGet full text

Cover

More Information
Summary:β - Ga 2 O 3 thin films have been prepared on (0001) sapphire substrates by the sol-gel method. X-ray diffraction showed that β - Ga 2 O 3 polycrystalline films were formed at heat-treatment temperatures above 600 ° C . With increasing heat-treatment temperature above 900 ° C , the lattice constants of the β - Ga 2 O 3 films decreased, while the band gap increased. Planar geometry photoconductive detectors based on the sol-gel prepared β - Ga 2 O 3 thin films have been fabricated. They showed the photoresponse only for the wavelengths shorter than 270 nm , which correspond to the solar-blind region. The peak wavelength in the spectral response depended on the heat-treatment temperature in the sol-gel process.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2432946