Surpassing 90% Shockley-Queisser limit in 1.79 eV wide-bandgap perovskite solar cells using bromine-substituted self-assembled monolayers
All-perovskite tandem solar cells (TSCs) hold the promise of surpassing the efficiency limits of single-junction solar cells. However, enhancing TSC efficiency faces the challenge of significant open-circuit voltage ( V OC ) loss in the wide-bandgap (WBG) subcell. In this study, we employed a bromin...
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Published in | Energy & environmental science Vol. 18; no. 4; pp. 1847 - 1855 |
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Main Authors | , , , , , , , , , , , , , , , , , , , |
Format | Journal Article |
Published |
18.02.2025
|
Online Access | Get full text |
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Summary: | All-perovskite tandem solar cells (TSCs) hold the promise of surpassing the efficiency limits of single-junction solar cells. However, enhancing TSC efficiency faces the challenge of significant open-circuit voltage (
V
OC
) loss in the wide-bandgap (WBG) subcell. In this study, we employed a bromine-substitution strategy to develop a novel self-assembled monolayer, (4-(3,11-dibromo-7
H
-dibenzo[
c
,
g
]carbazol-7-yl)butyl)phosphonic acid (
DCB-Br-2
), as the hole-transporting layer for 1.79-eV WBG perovskite solar cells. The bromine in
DCB-Br-2
donates a pair of non-bonded electrons to uncoordinated Pb
2+
ions or halide vacancies, enhancing interaction with the perovskite layer and suppressing interfacial non-radiative recombination.
DCB-Br-2
also adjusts energy level alignment, facilitating fast hole extraction. The optimized WBG solar cell achieved a maximum
V
OC
of 1.37 V, surpassing 90% of the Shockley-Queisser limit. Combined with a 1.25-eV narrow-bandgap subcell, this enabled a two-terminal all-perovskite TSC with a champion power conversion efficiency of 27.70%, advancing the development of high-performance tandem devices.
DCB-Br-2
is used as a hole-transporting layer for 1.79 eV wide-bandgap perovskite solar cells. Its stronger interaction with the perovskite and better energy level alignment enable the achievement of a notable
V
OC
of 1.37 V. |
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Bibliography: | https://doi.org/10.1039/d4ee04029e Electronic supplementary information (ESI) available. See DOI |
ISSN: | 1754-5692 1754-5706 |
DOI: | 10.1039/d4ee04029e |