First-principles study on electronic states of InSe/Au heterostructure controlled by strain engineering

• Published in: RSC advances Vol. 13; no. 17; pp. 11385 - 11392
• Main Authors: Han, Sha, Xia, Cai-Juan, Li, Min, Zhao, Xu-Mei, Zhang, Guo-Qing, Li, Lian-Bi, Su, Yao-Heng, Fang, Qing-Long
• Format: Journal Article
• Published: 11.04.2023
• ISSN: 2046-2069
• DOI: 10.1039/d3ra00134b

The development of low-dimensional multifunctional devices has become increasingly important as the size of field-effect transistors decreases. In recent years, the two-dimensional (2D) semiconductor In 2 Se 3 has emerged as a promising candidate for applications in the fields of electronics and optoelectronics owing to its remarkable spontaneous polarization properties. Through first-principles calculations, the effects of the polarization direction and biaxial tensile strain on the electronic and contact properties of In 2 Se 3 /Au heterostructures are investigated. The contact type of In 2 Se 3 /Au heterostructures depends on the polarization direction of In 2 Se 3 . The more charge transfers from the metal to the space charge region, the biaxial tensile strain increases. Moreover, the upward polarized In 2 Se 3 in contact with Au maintains a constant n-type Schottky contact as the biaxial tensile strain increases, with a barrier height Φ SB,n of only 0.086 eV at 6% strain, which is close to ohmic contact. On the other hand, the downward polarized In 2 Se 3 in contact with Au can be transformed from p-type to n-type by applying a biaxial tensile strain. Our calculation results can provide a reference for the design and fabrication of In 2 Se 3 -based field effect transistors. The development of low-dimensional multifunctional devices has become increasingly important as the size of field-effect transistors decreases.