Anisotropic charge transfer and gate tuning for p-SnS/n-MoS vertical van der Waals diodes

• Published in: Nanoscale Vol. 15; no. 37; pp. 15344 - 15351
• Main Authors: Yuan, Hui, Xu, Ruihan, Ren, Jiale, Yang, Jielin, Wang, Shouyang, Tian, Dongwen, Fu, Yingshuang, Li, Quan, Peng, Xiaoniu, Wang, Xina
• Format: Journal Article
• Published: 29.09.2023
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/d3nr03508e

2D-material-based van der Waals heterostructures (vdWhs) have shown great potential in next-generation multi-functional microelectronic devices. Thanks to their sharp interface and ultrathin thickness, 2D p-n junctions with high rectification properties have been established by combining p-type monochalcogenides with n-type transition metal dichalcogenides. However, the anisotropic rectification together with the charge transfer and gate effect has not been clarified. Herein, the electrical anisotropy of p-SnS/n-MoS 2 diodes was studied. Optimum ideality factors within 1.08-1.18 have been achieved for the diode with 6.6 nm thick SnS on monolayer MoS 2 , and a high rectification ratio of 3.1 × 10 4 with strong in-plane anisotropy is observed along the zigzag direction of SnS. A strong gate effect on the anisotropic series resistance has been verified and an effective tuning over the transport length of the SnS channel can be established through adjustment of the current orientation and gate voltage. A thickness-dependent minority carrier transport mechanism has also been demonstrated for the reverse drain current, and Fowler-Nordheim tunneling and direct tunneling are proposed for the increase of the reverse current of the thicker and thinner diodes, respectively. This work will provide another strategy for high-performance diodes based on vdWhs via the control of the current orientation and the gate effect. p-SnS/n-MoS 2 van der Waals heterostructure diodes with an ideality factor of ∼ 1.1 and high rectification ratio have been achieved, where a strong gate-dependent anisotropic rectification property has been tuned with the SnS channel length.