CsPbBr and CsPbBr perovskite light-emitting diodes using a thermally evaporated host-dopant system
This article shows the results of fabricating a device through vacuum deposition by synthesizing a perovskite thin film in the powder form. Light emitting diodes (LEDs) were fabricated using a single-source and host-dopant system of the perovskite produced in the powder form. Both CsPbBr 3 and Cs 4...
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Published in | Nanoscale Vol. 15; no. 21; pp. 9533 - 9542 |
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Main Authors | , , |
Format | Journal Article |
Published |
01.06.2023
|
Online Access | Get full text |
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Summary: | This article shows the results of fabricating a device through vacuum deposition by synthesizing a perovskite thin film in the powder form. Light emitting diodes (LEDs) were fabricated using a single-source and host-dopant system of the perovskite produced in the powder form. Both CsPbBr
3
and Cs
4
PbBr
6
used in the host-dopant system were green, and the host was tris(8-quinolinolato) aluminum(
iii
). It is confirmed that the display efficiency and optical characteristics are significantly improved by the dopant ratio. The 3%-doped CsPbBr
3
based LED shows a luminance of 9083 cd m
−2
, 3.36% external quantum efficiency (EQE), and 96% photoluminescence quantum yield (PLQY) efficiency (for the undoped CsPbBr
3
LED, luminance: 844 cd m
−2
/EQE: 1.93%/PLQY: 85%). The LED based on 5%-doped Cs
4
PbBr
6
shows a luminance of 11 440 cd m
−2
, an EQE of 6.27%, and 99% PLQY efficiency (for the undoped Cs
4
PbBr
6
LED, luminance:1113 cd m
−2
/EQE: 1.64%/PLQY: 93%). It is expected that the results of this research will contribute to the perovskite LED research performed by thermal evaporation in the future.
Light emitting diodes were fabricated using a single-source and host-dopant system of the perovskite produced in the powder form. Both CsPbBr
3
and Cs
4
PbBr
6
used in the host-dopant system were green, and the host was tris(8-quinolinolato) aluminum(
iii
). |
---|---|
Bibliography: | https://doi.org/10.1039/d3nr01190a Electronic supplementary information (ESI) available: Fig. S1-S7, ESI about optical properties and device performance depending on the transport layer. See DOI |
ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/d3nr01190a |