CsPbBr and CsPbBr perovskite light-emitting diodes using a thermally evaporated host-dopant system

This article shows the results of fabricating a device through vacuum deposition by synthesizing a perovskite thin film in the powder form. Light emitting diodes (LEDs) were fabricated using a single-source and host-dopant system of the perovskite produced in the powder form. Both CsPbBr 3 and Cs 4...

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Bibliographic Details
Published inNanoscale Vol. 15; no. 21; pp. 9533 - 9542
Main Authors Bae, Sa-Rang, Seol, Myeong Jin, Kim, Soo Young
Format Journal Article
Published 01.06.2023
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Summary:This article shows the results of fabricating a device through vacuum deposition by synthesizing a perovskite thin film in the powder form. Light emitting diodes (LEDs) were fabricated using a single-source and host-dopant system of the perovskite produced in the powder form. Both CsPbBr 3 and Cs 4 PbBr 6 used in the host-dopant system were green, and the host was tris(8-quinolinolato) aluminum( iii ). It is confirmed that the display efficiency and optical characteristics are significantly improved by the dopant ratio. The 3%-doped CsPbBr 3 based LED shows a luminance of 9083 cd m −2 , 3.36% external quantum efficiency (EQE), and 96% photoluminescence quantum yield (PLQY) efficiency (for the undoped CsPbBr 3 LED, luminance: 844 cd m −2 /EQE: 1.93%/PLQY: 85%). The LED based on 5%-doped Cs 4 PbBr 6 shows a luminance of 11 440 cd m −2 , an EQE of 6.27%, and 99% PLQY efficiency (for the undoped Cs 4 PbBr 6 LED, luminance:1113 cd m −2 /EQE: 1.64%/PLQY: 93%). It is expected that the results of this research will contribute to the perovskite LED research performed by thermal evaporation in the future. Light emitting diodes were fabricated using a single-source and host-dopant system of the perovskite produced in the powder form. Both CsPbBr 3 and Cs 4 PbBr 6 used in the host-dopant system were green, and the host was tris(8-quinolinolato) aluminum( iii ).
Bibliography:https://doi.org/10.1039/d3nr01190a
Electronic supplementary information (ESI) available: Fig. S1-S7, ESI about optical properties and device performance depending on the transport layer. See DOI
ISSN:2040-3364
2040-3372
DOI:10.1039/d3nr01190a