A new strategy: realization of organic heteroepitaxy and organic alloys based on the similarity of C&z.dbd;C and N&z.dbd;N

Heteroepitaxial growth and alloys with novel physicochemical properties are attracting great attention in the photoelectric field, and inorganic heteroepitaxial growth and inorganic alloys have been well controlled via changing experimental conditions. Meanwhile, organic heterostructures (OHSs) and...

Full description

Saved in:
Bibliographic Details
Published inCrystEngComm Vol. 25; no. 17; pp. 2655 - 2661
Main Authors Guan, Shaoqing, Zhao, Guixia, Sun, Yichen, Tang, Zhenxun, Pan, Jiahong, Wang, Jianjun, Ji, Zhuoyu, Wang, Xiangke
Format Journal Article
Published 27.04.2023
Online AccessGet full text

Cover

Loading…
More Information
Summary:Heteroepitaxial growth and alloys with novel physicochemical properties are attracting great attention in the photoelectric field, and inorganic heteroepitaxial growth and inorganic alloys have been well controlled via changing experimental conditions. Meanwhile, organic heterostructures (OHSs) and organic alloys (OAs) are less studied due to strict requirements for lattice parameters. Moreover, the occurrence of organic homogeneous nucleation is another main problem to solve in OHSs and OAs. Herein, by taking advantage of the similarity between N&z.dbd;N and C&z.dbd;C, we present a cocrystal strategy to maintain the molecular arrangement and lattice parameters, and perfect lattice matching is realized in the case of mutual substitution of N&z.dbd;N and C&z.dbd;C in molecules. Furthermore, we successfully achieved perfect organic heteroepitaxy and organic alloys with the same materials. We expect the realization of more versatile OHSs and OAs by introducing N&z.dbd;N and C&z.dbd;C into the photoelectric field. The similarity of N&z.dbd;N and C&z.dbd;C in trans -4,4′-azobis(pyridine) and trans -1,2-bis(pyridin-4-yl)ethene offers an innovative approach for creating controllable and versatile organic heterostructure and organic alloy.
Bibliography:https://doi.org/10.1039/d3ce00098b
Electronic supplementary information (ESI) available. See DOI
ISSN:1466-8033
DOI:10.1039/d3ce00098b