Co,N-doped GQDs/SnO mesoporous microspheres exhibit synergistically enhanced gas sensing properties for HS gas detection
Graphene quantum dots (GQDs) are emerging as one of the promising candidate materials that have the properties of both graphene and semiconductor quantum dots; moreover, they can be dispersed in common solvents and compounded with solid materials for developing high-performance gas sensors. In this...
Saved in:
Published in | Journal of materials chemistry. A, Materials for energy and sustainability Vol. 1; no. 19; pp. 1759 - 1767 |
---|---|
Main Authors | , , , , , , , |
Format | Journal Article |
Published |
17.05.2022
|
Online Access | Get full text |
Cover
Loading…
Summary: | Graphene quantum dots (GQDs) are emerging as one of the promising candidate materials that have the properties of both graphene and semiconductor quantum dots; moreover, they can be dispersed in common solvents and compounded with solid materials for developing high-performance gas sensors. In this work, we prepared cobalt (Co) and nitrogen (N) co-doped GQD-modified SnO
2
composites (Co,N-GQDs/SnO
2
) by a solvothermal route, in which Co,N-GQDs were prepared by using citric acid, urea and CoCl
2
as the source of the hydrothermal method. The optimal sensor response value toward 100 ppm H
2
S is about 37.3 at 260 °C, which is over 2 times higher than those of pure SnO
2
mesoporous microspheres at 312 °C. In addition, this material has excellent selectivity, good reproducibility, fast response/recovery time (5/11 s to 100 ppm), and ppb-level H
2
S detection ability (1.18 to 50 ppb H
2
S). The superior sensing performance of Co,N-GQDs/SnO
2
can be attributed to the increase of active sites on the surface of the materials and the electrical modulation of Co,N-GQDs. The facial fabrication and outstanding performance make our sensors highly attractive for H
2
S detection and expand the application fields of GQDs.
The optimal sensor (Co,N-GQDs/SnO
2
) response value toward 100 ppm H
2
S is 37.3 at 260 °C, which has superior sensing performance. This can be attributed to the increase of active sites on the surface and the electrical modulation of Co,N-GQDs. |
---|---|
Bibliography: | https://doi.org/10.1039/d2ta00837h Electronic supplementary information (ESI) available. See |
ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/d2ta00837h |