Stability & durability of self-driven photo-detective parameters based on SnSbSe ( = 0, 0.05, 0.10, 0.15, 0.20) ternary alloy single crystals

In the present investigation Sn 1− β Sb β Se crystals are grown using the direct vapor transport method. The crystals after growth were analyzed by EDAX and XPS to confirm the elemental composition. The surface morphological properties were studied by scanning electron microscope, confirming a flat...

Full description

Saved in:
Bibliographic Details
Published inRSC advances Vol. 12; no. 44; pp. 28693 - 2876
Main Authors Jagani, Hirenkumar Shantilal, Dixit, Vijay, Patel, Abhishek, Gohil, Jagrutiba, Pathak, V. M
Format Journal Article
Published 10.10.2022
Online AccessGet full text

Cover

More Information
Summary:In the present investigation Sn 1− β Sb β Se crystals are grown using the direct vapor transport method. The crystals after growth were analyzed by EDAX and XPS to confirm the elemental composition. The surface morphological properties were studied by scanning electron microscope, confirming a flat surface and layered growth of the Sn 1− β Sb β Se crystals. The structural properties studied by X-ray diffraction and high-resolution transmission electron microscopy confirm the orthorhombic structure of the grown Sn 1− β Sb β Se crystals. The Raman spectroscopic measurements evince the presence of B2g and Ag vibration modes. The PL intensity peak at ∼400 nm to 500 nm confirms the energy band gap. The indirect energy band gap of 1.18 eV was evaluated using Tauc plot by employing UV-visible spectroscopy making it a promising candidate for optoelectronic and photonic applications. The pulse photo response of pure and doped samples was studied under a monochromatic source of wavelength 670 nm and intensity of 30 mW cm −2 at zero biasing voltage firstly on day one and then the same samples were preserved for 50 days and the stability of the photodetectors was observed. Photodetector parameters such as rise time, decay time, photocurrent, responsivity, sensitivity, and detectivity were observed, and evaluated results are presented in this article. DVT grown SnSbSe crystals were characterized using E-DAX, XPS, XRD, SEM, HRTEM, UV, PL and Raman characterizations. Photodetection parameters depict the improvement in the stability and durability of device for SbSnSe photodetector compare to SnSe.
Bibliography:0, 0.05, 0.10, 0.15, 0.20). Table. S2. Atomic percentage data obtain from EDAX spectra of as grown Sn
Electronic supplementary information (ESI) available: Table. S1. The growth parameters fixed for crystal growth of Sn
https://doi.org/10.1039/d2ra05492b
0.90
0.95
0.85
Se crystal. Fig. S4. The XPS Spectra of Sb
0, 0.05, 0.10, 0.15, 0.20) crystals. Fig. S5. The optical microscopic images of Sn
0, 0.05, 0.10, 0.15, 0.20) crystals. See
Sb
Se crystal. Table. S3. The XRD parameters of Sn
1
β
Se
Se crystal. Fig. S2. The XPS Spectra of Sb
0.1
Se crystal. Fig. S3.† The XPS Spectra of Sb
0.15
0.2
0.05
0, 0.05, 0.10, 0.15, 0.20) crystals. Fig. S1. The XPS Spectra of Sb
0, 0.05, 0.10, 0.15, 0.20) crystals. Fig. S6.† The energy stack and urbach energy of Sn
0.8
Sn
ISSN:2046-2069
DOI:10.1039/d2ra05492b