bridging nanotwinned all-solid-state Z-scheme g-CN/CdCO/CdS heterojunction photocatalyst by metal oxide for H evolution
Nanotwin and all-solid-state (ASS) Z-scheme heterojunction engineering are two widely used strategies for improving photocatalytic activity in H 2 production. However, both strategies fail to produce a satisfactory effect when used alone due to their own limitations. Hence, combining nanotwin and AS...
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Published in | Nanoscale Vol. 14; no. 19; pp. 748 - 7417 |
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Main Authors | , , , , , , |
Format | Journal Article |
Published |
19.05.2022
|
Online Access | Get full text |
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Summary: | Nanotwin and all-solid-state (ASS) Z-scheme heterojunction engineering are two widely used strategies for improving photocatalytic activity in H
2
production. However, both strategies fail to produce a satisfactory effect when used alone due to their own limitations. Hence, combining nanotwin and ASS Z-scheme heterojunction engineering is expected to improve photocatalytic activity effectively. Herein, we report a nanotwinned ASS Z-scheme g-C
3
N
4
/CdCO
3
/CdS (CN/CC/CS) photocatalyst synthesized for the first time by
in situ
bridging of (CN) and (CS) with a (CC) conductor. The growth and ripening of CN/CC/CS are limited by thiourea (Tu) and CN. CN/CC/CS can improve charge carrier separation and transfer kinetics due to the synergetic advantages of its nanotwin structure, ASS Z-scheme junction, N-Cd chemically bonded interfaces,
in situ
intimate contact, and hierarchical architecture. The visible-light-driven H
2
production rate of CN/CC/CS is 345% of that of CN/CS. This work proposes a new method for rationally designing novel materials with improved photocatalytic activity by combining heterojunction and defect engineering.
CdS and g-C
3
N
4
are
in situ
bridged by CdCO
3
to form nanotwined all-solid-state (ASS) Z-scheme g-C
3
N
4
/CdCO
3
/CdS heterojunction photocatalyst for enhanced visible-light-driven H
2
production. |
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Bibliography: | https://doi.org/10.1039/d2nr01809h Electronic supplementary information (ESI) available. See DOI |
ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/d2nr01809h |