Highly electrochemically and thermally stable donor-π-acceptor triphenylamine-based hole-transporting homopolymers oxidative polymerization

Development of organic semiconducting polymers combining simple and scalable synthesis with high stability, solubility and hole mobility is in high demand. In this work, we report two novel D-π-A triphenylamine-based homopolymers having thiophene as a side π-spacer linked to either hexyl- or 4-fluor...

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Published inNew journal of chemistry Vol. 46; no. 25; pp. 12311 - 12317
Main Authors Luponosov, Yuriy N, Solodukhin, Alexander N, Chuyko, Irina A, Peregudova, Svetlana M, Ponomarenko, Sergey A
Format Journal Article
Published 27.06.2022
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Summary:Development of organic semiconducting polymers combining simple and scalable synthesis with high stability, solubility and hole mobility is in high demand. In this work, we report two novel D-π-A triphenylamine-based homopolymers having thiophene as a side π-spacer linked to either hexyl- or 4-fluorophenyldicyanovinyl electron-withdrawing groups. The homopolymers can be easily synthesized via oxidative polymerization at room temperature of the corresponding monomers in the presence of FeCl 3 as an oxidant. The polymers possess a number of valuable properties for application in organic and hybrid optoelectronics, among which are high electrochemical and thermal stability ( T d is up to 594 °C; coke yield up to 90%), good solubility (up to 90 g L −1 in chloroform), high glass transition temperature (up to 223 °C), efficient light absorption in the UV-Vis region, low-lying HOMO energy levels ( ca. 5.36 eV) and sufficient hole mobility (up to 7 × 10 −5 cm 2 V −1 s −1 ) without any posttreatment in thin films. Polymers combining high electrochemical and thermal stability, good solubility, high T g and high coke residue with low-lying HOMO levels and reasonable hole mobilities in thin films are reported in this study.
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Electronic supplementary information (ESI) available: Experimental part, NMR spectra and
J
characteristics. See DOI
https://doi.org/10.1039/d2nj01758j
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ISSN:1144-0546
1369-9261
DOI:10.1039/d2nj01758j