C-H activation-derived polymer@TiO p-n heterojunction for photocatalytic hydrogen evolution
Semiconductor heterojunctions benefiting from efficient charge transfer and separation have been widely used in photocatalysis. Herein, heterojunctions based on polymeric and inorganic semiconductors, namely PyOT@TiO 2 , have been successfully constructed via in situ C-H activation polycondensation...
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Published in | Sustainable energy & fuels Vol. 5; no. 2; pp. 5166 - 5174 |
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Main Authors | , , , , , , |
Format | Journal Article |
Published |
12.10.2021
|
Online Access | Get full text |
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Summary: | Semiconductor heterojunctions benefiting from efficient charge transfer and separation have been widely used in photocatalysis. Herein, heterojunctions based on polymeric and inorganic semiconductors, namely PyOT@TiO
2
, have been successfully constructed
via in situ
C-H activation polycondensation of the pyrene unit (Py-) and 3-(2-(2-ethoxyethoxy)ethoxy)thiophene unit (-OT) in the presence of titanium dioxide (TiO
2
). The combination of the polymeric semiconductor PyOT with TiO
2
not only broadens the light response of TiO
2
, but also dramatically promotes the photo-generation exciton separation of PyOT. As a result, the optimized 50% PyOT@TiO
2
composite exhibited extensive visible light absorption (400-520 nm) and the highest photocatalytic hydrogen evolution rate using ascorbic acid (AA) as the sacrificial agent, which is approximately 135 and 21 times higher than those of single-components TiO
2
and PyOT, respectively. Mechanistic study by XPS, M-S plots and hydroxyl radical detection tests revealed the p-n heterojunction characteristics of PyOT@TiO
2
that contributed to the enhanced photocatalytic performance. Our work develops a promising strategy for the
in situ
construction of polymeric-inorganic soft-hard heterostructures
via
atom-economic C-H activation polymerization.
Polymer@TiO
2
p-n heterojunction photocatalysts are successfully constructed
via
atom-economic
in situ
C-H activation polymerization. |
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Bibliography: | 10.1039/d1se00970b Electronic supplementary information (ESI) available. See DOI |
ISSN: | 2398-4902 |
DOI: | 10.1039/d1se00970b |