Cobalt-doping in hierarchical NiS nanorod arrays enables high areal capacitance

Areal capacitance is an important metrics for miniaturized capacitive energy storage devices due to the constraint of device area. In the present work, we proposed a free-standing hierarchical cobalt-doped Ni 3 S 2 (Co-Ni 3 S 2 ) nanorod arrays as a novel pseudocapacitive electrode to realize impres...

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Published inJournal of materials chemistry. A, Materials for energy and sustainability Vol. 8; no. 26; pp. 13114 - 1312
Main Authors Chen, Qiang, Jin, Jialun, Kou, Zongkui, Jiang, Jiangmin, Fu, Yulu, Liu, Ziang, Zhou, Liang, Mai, Liqiang
Format Journal Article
LanguageEnglish
Published 07.07.2020
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Summary:Areal capacitance is an important metrics for miniaturized capacitive energy storage devices due to the constraint of device area. In the present work, we proposed a free-standing hierarchical cobalt-doped Ni 3 S 2 (Co-Ni 3 S 2 ) nanorod arrays as a novel pseudocapacitive electrode to realize impressively high areal capacitance. With enhanced surface area donated by the introduction of cobalt, the Co-Ni 3 S 2 nanorods exhibit an ultrahigh areal capacitance of 3.46 F cm −2 at 8 mA cm −2 , which is more than three-fold over that of pristine Ni 3 S 2 . When coupled with an FeOOH anode, the fabricated Co-Ni 3 S 2 //FeOOH hybrid supercapacitor can deliver a large areal capacitance of 1.61 F cm −2 , a peak energy density of 0.73 mW h cm −2 , and a peak power density of 36.00 mW cm −2 . Besides, the as-fabricated hybrid supercapacitor also exhibits stable capacitive performance (83.5% capacity retention after 5000 cycles). The advanced and stable Co-Ni 3 S 2 electrode developed in this work is highly desirable for micro supercapacitor devices. Cobalt-doped Ni 3 S 2 nanorod arrays have been prepared via a hydrothermal method. As a free-standing electrode, the Co-Ni 3 S 2 demonstrates ultrahigh areal capacitance, affording the Co-Ni 3 S 2 //FeOOH hybrid supercapacitor a high energy density.
Bibliography:10.1039/d0ta04483k
Electronic supplementary information (ESI) available. See DOI
ISSN:2050-7488
2050-7496
DOI:10.1039/d0ta04483k