Role of heat treatment on the structural and luminescence properties of Yb/Ln (Ln = Tm, Ho and Er) co-doped LaF nanoparticles
Hexagonal LaF 3 :Yb 3+ /Ln 3+ and tetragonal LaOF:Yb 3+ /Ln 3+ (Ln = Ho, Tm, Er) have been successfully prepared via a two-step reaction, which includes a facile aqueous ligand free solution method and the following heat treatment of the as-prepared LaF 3 precursor. The phase formation evolution fro...
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Published in | Physical chemistry chemical physics : PCCP Vol. 22; no. 42; pp. 24535 - 24543 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
04.11.2020
|
Online Access | Get full text |
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Summary: | Hexagonal LaF
3
:Yb
3+
/Ln
3+
and tetragonal LaOF:Yb
3+
/Ln
3+
(Ln = Ho, Tm, Er) have been successfully prepared
via
a two-step reaction, which includes a facile aqueous ligand free solution method and the following heat treatment of the as-prepared LaF
3
precursor. The phase formation evolution from LaF
3
to LaOF with different phase structures was characterized by X-ray diffraction (XRD), scanning electron microscopy, Fourier transform infrared, and Raman spectroscopy. At an annealing temperature of 500 °C pure hexagonal LaF
3
:Yb
3+
/Ln
3+
(Ln = Ho, Tm, Er) nanoparticles with an average size of 32 nm were obtained and they showed a strong visible upconversion and a modest infrared emission upon 976 nm laser excitation. Further, using an annealing temperature of 900 °C, tetragonal LaOF:Yb
3+
/Ln
3+
(Ln = Ho, Tm, Er) nanoparticles with a size of around 44 nm were obtained (obtained from XRD) and an expressive enhancement in the emission of the VIS and near-infrared regions was observed. These results envision applications that require efficient emissions such as fluorescent and thermal images, and LaF
3
nanocrystals have recently been widely explored for applications in biological systems.
Hexagonal LaF
3
:Yb
3+
/Ln
3+
and tetragonal LaOF:Yb
3+
/Ln
3+
have been successfully prepared
via
a two-step reaction, which includes a facile aqueous ligand free solution method and the following heat treatment of the as-prepared LaF
3
precursor. |
---|---|
Bibliography: | 10.1039/d0cp03316b Electronic supplementary information (ESI) available. See DOI |
ISSN: | 1463-9076 1463-9084 |
DOI: | 10.1039/d0cp03316b |