Concave structure of Cu2O truncated microcubes: PVP assisted {100} facet etching and improved facet-dependent photocatalytic propertiesElectronic supplementary information (ESI) available. See DOI: 10.1039/c8ce01332b

In this work, a concave structure of Cu 2 O truncated microcubes with {100} facet erosion has been successfully synthesized by a facile top-down etching method. Air and PVP were employed as an etchant and a shape controller agent, respectively. For the facet-selective capping of PVP on Cu 2 O {111}...

Full description

Saved in:
Bibliographic Details
Main Authors Li, Pengwei, Li, Dingding, Liu, Lina, Li, Anli, Luo, Cuixian, Xiao, Yue, Hu, Jie, Jiang, Huabei, Zhang, Wendong
Format Journal Article
Published 23.10.2018
Online AccessGet full text

Cover

Loading…
More Information
Summary:In this work, a concave structure of Cu 2 O truncated microcubes with {100} facet erosion has been successfully synthesized by a facile top-down etching method. Air and PVP were employed as an etchant and a shape controller agent, respectively. For the facet-selective capping of PVP on Cu 2 O {111} planes, the traditional relatively low energy {100} facets of Cu 2 O truncated microcubes would be selectively etched along their [100] zone axis in a top-down manner. The {100} facet etched Cu 2 O concave truncated microcubes exhibited highly improved photocatalytic activities (2.15 and 1.21 times, respectively) compared to that of the basic structure and the {111} facet etched samples on the degradation of Congo red (CR), displaying distinct facet-dependent photocatalytic characteristics, excellent stability and reusability. This work not only builds an efficient photocatalyst, but also provides a novel method to fabricate a variety of architectures with low energy facets etched and highly active crystal planes exposed, which is extremely important for the improvement of catalytic activities. Concave structure of Cu 2 O truncated microcubes with {100} facets etched with the assistance of air and PVP.
Bibliography:10.1039/c8ce01332b
Electronic supplementary information (ESI) available. See DOI
ISSN:1466-8033
DOI:10.1039/c8ce01332b