Bridged oxide nanowire device fabrication using single step metal catalyst free thermal evaporationElectronic supplementary information (ESI) available. See DOI: 10.1039/c7ra11987a

• Main Authors: Co kun, Mustafa, Ombaba, Matthew M, Dumluda, Fatih, Alt ndal, Ahmet, Islam, M. Saif
• Format: Journal Article
• Published: 14.03.2018
• ISSN: 2046-2069
• DOI: 10.1039/c7ra11987a

In this study, indium-tin-zinc-oxide (ITZO) and Zn doped In 2 O 3 nanowires were directly grown as bridged nanowires between two heavily doped silicon (Si) electrodes on an SOI wafer using single step vapor-solid-solid (VSS) growth method. SEM analysis showed highly dense and self aligned nanowire formation between the Si electrodes. Electrical and UV response measurements were performed in ambient condition. Current-voltage characteristics of devices exhibited both linear and non-linear behavior. This was the first demonstration of bridged ITZO and Zn-doped In 2 O 3 nanowires. Our results show that bridged nanowire growth technique can be a potential candidate for high performance electronic and optoelectronic devices. In this study, bridge metal-oxide nanowires grown directly between two Si electrodes on SOI wafer and their electrical performance were investigated.