Electronic to protonic conduction switching in Cu2O nanostructured porous films: the effect of humidity exposureElectronic supplementary information (ESI) available: Additional results related to the change in resistance of as-deposited and annealed CuO2 films on expose to humidity and dry air at various time intervals. See DOI: 10.1039/c7ra00383h
In this paper, we present the first experimental evidence for electronic to protonic conduction switching in p-type semiconducting nanostructured cuprous oxide (Cu 2 O) porous films when exposed to humidity. We also present a linear response at low relative humidity (RH < 48%). The Cu 2 O nanostr...
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Main Authors | , , |
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Format | Journal Article |
Language | English |
Published |
19.04.2017
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Online Access | Get full text |
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Summary: | In this paper, we present the first experimental evidence for electronic to protonic conduction switching in p-type semiconducting nanostructured cuprous oxide (Cu
2
O) porous films when exposed to humidity. We also present a linear response at low relative humidity (RH < 48%). The Cu
2
O nanostructured porous films were synthesized by spray pyrolysis of a Cu/Cu
2
O colloidal solution obtained by laser liquid medium ablation of a Cu target in water. The as-prepared and annealed Cu
2
O films were extensively characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction analysis, and Raman spectroscopy. The chemiresistor response to RH values from 7.5 to 84% was examined at a temperature of 22 °C and a pressure of 760 mmHg. At RH values below 48%, recombination of the majority charge carrier holes and electrons occurred owing to the dissociation of water molecules near the surface; the RH level was used to quantify the increase in resistance response (
R
Res
). Both devices revealed linear responses to RH (7.5-48%), with a maximum rate of 4.38 ± 0.16%/RH. As the RH increased beyond 48%, proton hopping between the physisorbed water molecules had a larger effect than the electronic conduction, and the response showed the opposite effect. The response exhibited a linear log-normal relationship with higher RH values (56-84%), with a maximum rate of −0.0694 ± 0.002 log(%)/RH. The mechanism for switching the resistive response trend of the Cu
2
O films is discussed.
In this paper, we present the first experimental evidence for electronic to protonic conduction switching in p-type semiconducting nanostructured cuprous oxide (Cu
2
O) porous films when exposed to humidity. |
---|---|
Bibliography: | 2 films on expose to humidity and dry air at various time intervals. See DOI Electronic supplementary information (ESI) available: Additional results related to the change in resistance of as-deposited and annealed CuO 10.1039/c7ra00383h |
ISSN: | 2046-2069 |
DOI: | 10.1039/c7ra00383h |