Triethanolamine doped multilayer MoS2 field effect transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c7cp00589j
Chemical doping has been investigated as an alternative method of conventional ion implantation for two-dimensional materials. We herein report chemically doped multilayer molybdenum disulfide (MoS 2 ) field effect transistors (FETs) through n-type channel doping, wherein triethanolamine (TEOA) is u...
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Format | Journal Article |
Language | English |
Published |
24.05.2017
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Abstract | Chemical doping has been investigated as an alternative method of conventional ion implantation for two-dimensional materials. We herein report chemically doped multilayer molybdenum disulfide (MoS
2
) field effect transistors (FETs) through n-type channel doping, wherein triethanolamine (TEOA) is used as an n-type dopant. As a result of the TEOA doping process, the electrical performances of multilayer MoS
2
FETs were enhanced at room temperature. Extracted field effect mobility was estimated to be ∼30 cm
2
V
−1
s
−1
after the surface doping process, which is 10 times higher than that of the pristine device. Subthreshold swing and contact resistance were also improved after the TEOA doping process. The enhancement of the subthreshold swing was demonstrated by using an independent FET model. Furthermore, we found that the doping level can be effectively controlled by the heat treatment method. These results demonstrate a promising material system that is easily controlled with high performance, while elucidating the underlying mechanism of improved electrical properties by the doping effect in a multilayered scheme.
As a result of the TEOA doping process, the electrical performances of multilayer MoS
2
FETs were enhanced at room temperature. |
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AbstractList | Chemical doping has been investigated as an alternative method of conventional ion implantation for two-dimensional materials. We herein report chemically doped multilayer molybdenum disulfide (MoS
2
) field effect transistors (FETs) through n-type channel doping, wherein triethanolamine (TEOA) is used as an n-type dopant. As a result of the TEOA doping process, the electrical performances of multilayer MoS
2
FETs were enhanced at room temperature. Extracted field effect mobility was estimated to be ∼30 cm
2
V
−1
s
−1
after the surface doping process, which is 10 times higher than that of the pristine device. Subthreshold swing and contact resistance were also improved after the TEOA doping process. The enhancement of the subthreshold swing was demonstrated by using an independent FET model. Furthermore, we found that the doping level can be effectively controlled by the heat treatment method. These results demonstrate a promising material system that is easily controlled with high performance, while elucidating the underlying mechanism of improved electrical properties by the doping effect in a multilayered scheme.
As a result of the TEOA doping process, the electrical performances of multilayer MoS
2
FETs were enhanced at room temperature. |
Author | Lee, Kook Jin Ryu, Min-Yeul Shin, Minju Ko, Seung-Pil Kim, Gyu-Tae Jang, Ho-Kyun Huh, Junghwan Piao, Mingxing |
AuthorAffiliation | Korea University Chinese Academy of Sciences School of Electrical Engineering Chongqing Institute of Green and Intelligent Technology |
AuthorAffiliation_xml | – name: Korea University – name: Chinese Academy of Sciences – name: Chongqing Institute of Green and Intelligent Technology – name: School of Electrical Engineering |
Author_xml | – sequence: 1 givenname: Min-Yeul surname: Ryu fullname: Ryu, Min-Yeul – sequence: 2 givenname: Ho-Kyun surname: Jang fullname: Jang, Ho-Kyun – sequence: 3 givenname: Kook Jin surname: Lee fullname: Lee, Kook Jin – sequence: 4 givenname: Mingxing surname: Piao fullname: Piao, Mingxing – sequence: 5 givenname: Seung-Pil surname: Ko fullname: Ko, Seung-Pil – sequence: 6 givenname: Minju surname: Shin fullname: Shin, Minju – sequence: 7 givenname: Junghwan surname: Huh fullname: Huh, Junghwan – sequence: 8 givenname: Gyu-Tae surname: Kim fullname: Kim, Gyu-Tae |
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Title | Triethanolamine doped multilayer MoS2 field effect transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c7cp00589j |
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