Incorporation of indium into -gallium oxide epitaxial thin films grown mist chemical vapour deposition for bandgap engineering
Epitaxial -gallium oxide (Ga 2 O 3 ) thin films incorporated with In were successfully grown by mist chemical vapour deposition (CVD) on c -plane sapphire substrates for bandgap tuning. In was successfully incorporated into epitaxial -(In x Ga 1− x ) 2 O 3 films at an In composition of x = 0.2 witho...
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| Published in | CrystEngComm Vol. 2; no. 13; pp. 1882 - 1888 |
|---|---|
| Main Authors | , , , , |
| Format | Journal Article |
| Published |
26.03.2018
|
| Online Access | Get full text |
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| Summary: | Epitaxial -gallium oxide (Ga
2
O
3
) thin films incorporated with In were successfully grown by mist chemical vapour deposition (CVD) on
c
-plane sapphire substrates for bandgap tuning. In was successfully incorporated into epitaxial -(In
x
Ga
1−
x
)
2
O
3
films at an In composition of
x
= 0.2 without inducing phase separation. Phase separation originated from the (400) bixbyite structure of (In
x
Ga
1−
x
)
2
O
3
when
x
> 0.2. The solubility limit of In incorporated into -Ga
2
O
3
on sapphire substrates
via
mist CVD was therefore
x
= 0.2. Transmission electron microscopy measurements revealed that -(In
x
Ga
1−
x
)
2
O
3
consisted of polycrystalline phases observed in the interface of the sapphire substrate and -phases located above the polycrystalline phase. The pole figure of -(In
x
Ga
1−
x
)
2
O
3
thin films revealed that the epitaxial relationship between the -(In
x
Ga
1−
x
)
2
O
3
thin film and the α-Al
2
O
3
substrate is (001) -(In
x
Ga
1−
x
)
2
O
3
[130]||(0001) α-Al
2
O
3
[11−20]. The optical bandgap of the -(In
x
Ga
1−
x
)
2
O
3
thin films was tuned from 4.5 to 5.0 eV without inducing phase separation.
Epitaxial -gallium oxide (Ga
2
O
3
) thin films incorporated with In were successfully grown by mist chemical vapour deposition (CVD) on
c
-plane sapphire substrates for bandgap tuning. |
|---|---|
| ISSN: | 1466-8033 |
| DOI: | 10.1039/c7ce02103h |