Precise regulation of tilt angle of Si nanostructures via metal-assisted chemical etchingElectronic supplementary information (ESI) available. See DOI: 10.1039/c6nr08384f

• Main Authors: Teng, Fei, Li, Ning, Xu, Daren, Xiao, Dongyang, Yang, Xiangchao, Lu, Nan
• Format: Journal Article
• Language: English
• Published: 22.12.2016
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/c6nr08384f

The ability to regulate the tilt angle of Si nanostructures is important for their applications in photoelectric devices. Herein we demonstrate a facile method to precisely regulate the tilt angle of nanocones with metal-assisted chemical etching (MaCE) in a one-step process based on the systematic investigation of the formation mechanism of the tilt angle. With Au nanohole arrays as templates, the tilt angles of Si nanocone arrays can be tuned from 69.2° to 88.6° by varying the composition of the etchant. When the Si nanocone arrays are the same height (2.2 μm), the reflectivity decreases with the decreasing of the tilt angle. When the tilt angle is 83.0°, the average reflectivity is lowered to 1.37% in the 250-1000 nm range. This method can be applied for fabrication over a large area (as large as 2 cm × 2 cm). This chemical method should be applicable to other Si nanostructures, which may promote the applications of MaCE in semiconductor manufacturing. The gradient of Si nanocones is regulated precisely using metal-assisted chemical etching based on the investigation of the formation mechanism of the gradients.