Passivated ambipolar black phosphorus transistorsElectronic supplementary information (ESI) available: Transfer characteristics of BP field effect transistors (BV1-BV4) (Fig. S1 and S2 and Table S1); output characteristics of BP field effect transistors in different directions (Fig. S3). Performance characteristics of the recent work (Table S2). N-type BP FETs (Fig. S4). Output characteristics of BV passivated BP field effect transistors after exposing to air for 180 days (Fig. S5). The relation

• Main Authors: Yue, Dewu, Lee, Daeyeong, Jang, Young Dae, Choi, Min Sup, Nam, Hye Jin, Jung, Duk-Young, Yoo, Won Jong
• Format: Journal Article
• Published: 23.06.2016
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/c6nr02554d

We report the first air-passivated ambipolar BP transistor formed by applying benzyl viologen, which serves as a surface charge transfer donor for BP flakes. The passivated BP devices exhibit excellent stability under both an ambient atmosphere and vacuum; their transistor performance is maintained semi-permanently. Unlike their intrinsic p-type properties, passivated BP devices present advantageous ambipolar properties with much higher electron mobility up to ∼83 cm 2 V −1 s −1 from 2-terminal measurement at 300 K, compared to other reported studies on n-type BP transistors. On the basis of the n-type doping effect that originated from benzyl viologen, we also systematically investigated the BP thickness dependence of our devices on electrical properties, in which we found the best electron transport performance to be attained when an ∼10 nm thick BP flake was used. We report the first air-passivated ambipolar BP transistor formed by applying benzyl viologen, which exhibit excellent stability in both ambient and vacuum.