Atomic layer deposition of diisopropylaminosilane on WO3(001) and W(110): a density functional theory studyElectronic supplementary information (ESI) available. See DOI: 10.1039/c6cp05720a

• Main Authors: Lee, Kyungtae, Lee, Woojin, Lee, Hyo Sug, Shin, Jaikwang, Park, Jieun, Lee, Seongsuk, Choi, Samjong, Kim, Sueryeon, Kim, Jinseong, Shim, Youngseon
• Format: Journal Article
• Language: English
• Published: 26.10.2016
• ISSN: 1463-9076; 1463-9084
• DOI: 10.1039/c6cp05720a

The decomposition reactions of the Si precursor, diisopropylaminosilane (DIPAS), on W(110) and hydroxylated WO 3 (001) surfaces are investigated to elucidate the initial reaction mechanism of the atomic layer deposition (ALD) process using density functional theory (DFT) calculations combined with ab initio molecular dynamics (AIMD) simulations. The decomposition reaction of DIPAS on WO 3 (001) consists of two steps: Si-N dissociative chemisorption and decomposition of SiH 3 *. It is found that the Si-N bond cleavage of DIPAS is facile on WO 3 (001) due to hydrogen bonding between the surface OH group and the N atom of DIPAS. The rate-determining step of DIPAS decomposition on WO 3 (001) is found to be the Si-H dissociation reaction of the SiH 3 * reaction intermediate which has an activation barrier of 1.19 eV. On the contrary, sequential Si-H dissociation reactions first occur on W(110) and then the Si-N dissociation reaction of the C 5 H 7 NSi* reaction intermediate is found to be the rate-determining step, which has an activation barrier of 1.06 eV. As a result, the final products in the DIPAS decomposition reaction on WO 3 (001) are Si* and SiH*, whereas Si* atoms remain with carbon impurities on W(110), which imply that the hydroxylated WO 3 surface is more efficient for the ALD process. The decomposition reaction mechanisms of the Si precursor, diisopropylaminosilane (DIPAS), on W(110) and WO 3 (001) surfaces are compared using the density functional theory (DFT) method.