Synthesis and spectral properties of double D-π-A mono-cyanines as well as preparation of near infrared silicon-based materialsElectronic supplementary information (ESI) available. See DOI: 10.1039/c5ra08759g

• Main Authors: Wang, Shu, Zhang, Xiufu, Zhang, Jianghua, Bi, Weibin, Wang, Lanying
• Format: Journal Article
• Language: English
• Published: 31.07.2015
• ISSN: 2046-2069
• DOI: 10.1039/c5ra08759g

Three kinds of new double D-π-A mono-cyanines D1 , D2 and D3 were synthesized for the surface modification of monocrystalline silicon to prepare near infrared silicon-based materials. There was a strong surface photovoltage response in the range of 900-1250 nm compared with silicon materials when double D-π-A mono-cyanines were bound on the monocrystalline silicon material surface. To explore the effect of the double D-π-A mono-cyanines on the light absorption characteristics of silicon materials, the absorption properties, films on monocrystalline silicon surfaces and the surface photovoltage response of three double D-π-A mono-cyanines were investigated. The results demonstrated that the order of the intensity of the surface photovoltage response was Si/ D3 > Si/ D2 > Si/ D1 , and no absorption properties of the silicon materials in the near infrared region were improved, yielding near infrared silicon-based materials. Three kinds of new double D-π-A mono-cyanines were synthesized for the surface modification of monocrystalline silicon. The prepared materials had a strong surface photovoltage response in the range 900-1250 nm.