The intrinsic origin of hysteresis in MoS2 field effect transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07336g
We investigate the hysteresis and gate voltage stress effect in MoS 2 field effect transistors (FETs). We observe that both the suspended and the SiO 2 -supported FETs have large hysteresis in their transfer curves under vacuum which cannot be attributed to the traps at the interface between the MoS...
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Main Authors | , , , , , |
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Format | Journal Article |
Published |
28.01.2016
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Online Access | Get full text |
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Summary: | We investigate the hysteresis and gate voltage stress effect in MoS
2
field effect transistors (FETs). We observe that both the suspended and the SiO
2
-supported FETs have large hysteresis in their transfer curves under vacuum which cannot be attributed to the traps at the interface between the MoS
2
and the SiO
2
or in the SiO
2
substrate or the gas adsorption/desorption effect. Our findings indicate that the hysteresis we observe comes from the MoS
2
itself, revealing an intrinsic origin of the hysteresis besides some extrinsic factors. The fact that the FETs based on thinner MoS
2
have larger hysteresis than that with thicker MoS
2
suggests that the surface of MoS
2
plays a key role in the hysteresis. The gate voltage sweep range, sweep direction, sweep time and loading history all affect the hysteresis observed in the transfer curves.
Experiments revealed that MoS
2
also contributes to the hysteresis in the transfer curve of FETs. |
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Bibliography: | Electronic supplementary information (ESI) available. See DOI 10.1039/c5nr07336g |
ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/c5nr07336g |