The intrinsic origin of hysteresis in MoS2 field effect transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07336g

• Main Authors: Shu, Jiapei, Wu, Gongtao, Guo, Yao, Liu, Bo, Wei, Xianlong, Chen, Qing
• Format: Journal Article
• Published: 28.01.2016
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/c5nr07336g

We investigate the hysteresis and gate voltage stress effect in MoS 2 field effect transistors (FETs). We observe that both the suspended and the SiO 2 -supported FETs have large hysteresis in their transfer curves under vacuum which cannot be attributed to the traps at the interface between the MoS 2 and the SiO 2 or in the SiO 2 substrate or the gas adsorption/desorption effect. Our findings indicate that the hysteresis we observe comes from the MoS 2 itself, revealing an intrinsic origin of the hysteresis besides some extrinsic factors. The fact that the FETs based on thinner MoS 2 have larger hysteresis than that with thicker MoS 2 suggests that the surface of MoS 2 plays a key role in the hysteresis. The gate voltage sweep range, sweep direction, sweep time and loading history all affect the hysteresis observed in the transfer curves. Experiments revealed that MoS 2 also contributes to the hysteresis in the transfer curve of FETs.